isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
BD826
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD825 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and
television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.
0
A
ICP
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ ...