isc Silicon
NPN Darlington Power
Transistor
BDW83C
DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER Collector-Emitter Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
5
A...