BFR106

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifi...