isc Silicon
NPN Power
Transistors
INCHANGE Semiconductor
BLD137DL
DESCRIPTION ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulators ·High frequency inverters ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
400
VCEO
Collector-Emitter Voltage
200
VEBO
Emitter-Base Voltage
9
IC
Collector Current-Continuous
12
PT
Total Power Dissipation
80
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V ...