isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
120
V
VEBO IC
Emitter-Base Voltage Collector Current-Continuous
6
V
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current
4
A
PC
Collector Power Dissipation@TC=25℃
62
W
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