isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO VEBO
IC
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
200
V
6
V
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current
4
A
PC
Collector Power Dissipation@TC=25℃
62
W
T...