isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 400V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal output and high power switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
15
A
85
W
150
℃
Tstg
Storage...