isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltag-
: VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal output and high power switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak Repetitive
15
A
PC
Collector Power Dissipation @ TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
BU4...