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BU508AFI

Part Number BU508AFI
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 7, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switc...
Datasheet BU508AFI





Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature ...






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