isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BUL416T
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 800V(Min.
) ·Low Collector Saturation Voltage
: VCE(sat) = 1.
5V(Max) @ IC= 2A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1600
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-peak tp5ms
9
A
IB
Base Current-C...