isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
175
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
80
A
ICM
Peak Collector Current
100
A
PC
Collector Power Dissipation
300
W
TJ
Junction Temperature
-55~200 ℃
Tstg
Storage T...