isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
FJD3076
DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
PC
Collector Power Dissipation (Ta=25℃)
1
W
PC
Collector Power Dissipation (Tc=25℃)
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range -55~150
℃
...