isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·High voltage,fT ·Complement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-100
mA
1.
2
w
10
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
KSA1142
isc website：www.
iscsemi.
com
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