isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·CRT display,video output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-300
V
VCEO Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
1
A
1.
2
w
7
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
KSA1381
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered tradem...