isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
KT8232A1
DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in automotive environment as
electronic ignition power actuators.
ABSOLUTE
MAXIMUM
RATINGS
(T
aB
B
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
350
V
VBEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current
1
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TBCB=25℃
T ...