isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
MJ15018
DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Electronic ignition ·Alternator
regulator ·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB PD
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation
200
V
200
V
7
V
4
A
2
A
150
W
Tj
Max.
Junction Temperature
20...