|
Part Number
|
MJB3055 |
|
Manufacturer
|
INCHANGE |
|
Description
|
NPN Transistor |
|
Published
|
Sep 9, 2020 |
|
Datasheet
|
MJB3055
|
Features
isc Silicon NPN Power Transistor
MJB3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICA...
Similar Datasheet