isc Silicon
NPN Power
Transistor
DESCRIPTION ·High DC current amplifier rate
hFE: 50-200@VCE= 5V,IC= 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power audio, disk head positioners and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
230
V
VCEO Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Pulse
25
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL ...