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NJD35N04T4G

Part Number NJD35N04T4G
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Desig...
Datasheet NJD35N04T4G




Overview
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast switching speed ·Very low current requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Internal combustion engine ignition control ·Switching regulators ·Motor controls ·Light ballast ·Photo flash ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Max.
Collector Current-Continuous 8 A IB Base Current-Continuous PD ...






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