isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
NTE388
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
ICP
Collector Current-Pulse
30
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
...