isc Silicon
PNP Power
Transistors
INCHANGE Semiconductor
TIP36C*2
DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-40
A
ICM
Collector Current-peak
-50
A
IB
Base Current
-5
A
PC
Collector Power Dissipation@TC=25℃
200
W...