isc Silicon
PNP Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = -1.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -160V(Min) ·Complement to Type TIP35F ·Current Gain-Bandwidth Product-
: fT= 3.
0MHz(Min)@IC= -1.
0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-25
A
ICM
Collector Current-peak
-40
A
IB
Base Current
...