isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
TIP101
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.
0V(Max)@ IC= 3A = 2.
5V(Max)@ IC= 8A
·Complement to Type TIP106 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Contin...