isc Silicon
NPN Power
Transistor
isc Product Specification
TIP3055F
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Complement to Type TIP2955F ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
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