isc Silicon
PNP Power
Transistor
DESCRIPTION ·High DC current amplifier rate
hFE≥100@VCE=-5V,IC=-0.
5A ·Low collector-emitter saturation voltage:
VCE(sat)≤ -0.
4V@IC= -6A; IB= -300mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
PC
Total Power Dissipation @ Ta=25℃
-15
A
2
W
PC
Total Power Dissipation @ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage ...