isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 230V(Min) ·Complement to Type TTA1943 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier
output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
150
W
150
℃
Tstg
Storage Te...