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VS-MBRB735-M3, VS-MBRB745-M3
Vishay Semiconductors
High Performance
Schottky Rectifier, 7.
5 A
Base cathode
2
2 1
3 D2PAK (TO-263AB)
1 N/C
3 Anode
PRIMARY CHARACTERISTICS
IF(AV)
7.
5 A
VR
35 V, 45 V
VF at IF
0.
57 V
IRM
15 mA at 125 °C
TJ max.
150 °C
EAS Package
7 mJ D2PAK (TO-263AB)
Circuit configuration
Single
FEATURES
• 150 °C TJ operation • High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Designed and qualified accordin...