Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRD20100CT
FEATURES ·With TO-251(DPKE) package ·
Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss,High Efficiency ·High Surge Capability ·High Current Capability and Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 135℃
Non-repetitive Peak Surge Current 8.
3ms ha...