2N6349

2N6340 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain — hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

2N6340 : 2N6340 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 140V IC = 25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditi.

2N6340 : ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6338 VCBO Collector-base voltage 2N6339 2N6340 2N6341 2N6338 VCEO 2N6339 Collector-emitter voltage 2N6340 2N6341 VEBO IC ICM Emitter-base voltage Collector current Collector current-peak IBC Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Op.

2N6341 : TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/509 Devices 2N6338 2N6341 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol 2N6338 100 120 2N6341 150 180 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 6.0 10 25 200 112 -65 to +175 Max. 0.875 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case RθJC 0 0 Derate linearly 1.14 W/ C for TC = +25 C and TC = +2000C 0 TO-3* (TO-204AA) .

2N6341 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain — hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.

2N6341 : ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6338 VCBO Collector-base voltage 2N6339 2N6340 2N6341 2N6338 VCEO 2N6339 Collector-emitter voltage 2N6340 2N6341 VEBO IC ICM Emitter-base voltage Collector current Collector current-peak IBC Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Op.

2N6341 : 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain − hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max) • Pb−Free Packages are Available ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter.

2N6342 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6342/D Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Di.

2N6342 : 2N6342-2N6349 High-reliability discrete products and engineering services since 1977 SILICON BIDIRECTIONAL THYRISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz) 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349 VDRM 200 400 Volts 600 800 RMS on-state current Full cycle sine wave 50 to 60Hz TC = 80°C TC = 90°C IT(RMS) 8 Amps 4 Peak non-repetitive surge current (On.

2N6342A : 2N6342A (SILICON) thru 2N6349A MT20~----~~G OMT1 SILICON BIDIRECTIONAL THYRISTORS . designed primarily for full-wave ac control applications. such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silico~ gate controlled solid-state devices are needed. Triac type thyristors sWitch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Un iform ity and Stabil ity • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Trigger.

2N6343 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6342/D Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Di.

2N6343 : 2N6342-2N6349 High-reliability discrete products and engineering services since 1977 SILICON BIDIRECTIONAL THYRISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz) 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349 VDRM 200 400 Volts 600 800 RMS on-state current Full cycle sine wave 50 to 60Hz TC = 80°C TC = 90°C IT(RMS) 8 Amps 4 Peak non-repetitive surge current (On.

2N6343 : ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performance maximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current @Tc=80℃ ITSM Surge non-repetitive on-state current 60HZ PG(AV) Tj Tstg Average gate power dissipation ( over any 20 ms period ) Operating junction temperature Storage temperature 2N6343.

2N6343A : 2N6342A (SILICON) thru 2N6349A MT20~----~~G OMT1 SILICON BIDIRECTIONAL THYRISTORS . designed primarily for full-wave ac control applications. such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silico~ gate controlled solid-state devices are needed. Triac type thyristors sWitch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Un iform ity and Stabil ity • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Trigger.

2N6344 : 2N6344, 2N6349 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Gu.

2N6344 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6342/D Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Di.

2N6344 : 2N6342-2N6349 High-reliability discrete products and engineering services since 1977 SILICON BIDIRECTIONAL THYRISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz) 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349 VDRM 200 400 Volts 600 800 RMS on-state current Full cycle sine wave 50 to 60Hz TC = 80°C TC = 90°C IT(RMS) 8 Amps 4 Peak non-repetitive surge current (On.