Part Number
|
BT169EW |
Manufacturer
|
INCHANGE |
Description
|
Thyristors |
Published
|
Sep 14, 2020 |
Detailed Description
|
isc Thyristors
BT169EW
DESCRIPTION ·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and cent...
|
Datasheet
|
BT169EW
|
Overview
isc Thyristors
BT169EW
DESCRIPTION ·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state voltage
VRRM
Repetitive peak off-state voltage
IT(AV)
Average on-state current
IT(RMS)
RMS on-state current
PG(AV)
Average gate power
ITSM
Non-repetitive peak on-state current
Tj
Operating junction temperature
Tstg
Storage temperature
MIN
500 500 0.
63
1 0.
1 8 -40~110 -40~150
UNIT
V V A A W A ℃
℃...
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