isc Silicon
PNP Power
Transistor
2SA483
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO Collector-Emitter Voltage
-150
V
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.
5
A
IE
Emitter Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
20
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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