isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
3V(Max.
) @ IC= -1.
5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-2
A
PC
Total Power Dissipation@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2S...