isc Silicon
PNP Power
Transistor
2SA1006A
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-1.
5
A
ICM
Collector Current-Peak
-3.
0
A
Collector Power Dissipation@ Ta=25℃ 1.
5
PC
W
Total Power Dissipati...