isc Silicon
PNP Power
Transistor
2SB703
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·DC Current Gain-
: hFE= 40~200 @IC= -0.
5A ·Complement to Type 2SD743 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio frequency power amplifier, low
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
...