isc Silicon
PNP Power
Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·High Power Dissipation-
: PC= 150W(Max)@TC=25℃ ·High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Baser Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-4
A
150
W
150
℃
Tstg
Storage Temperature
-55~1...