isc Silicon
PNP Power
Transistor
2SB744
DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min) ·Complement to Type 2SD794 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio frequency amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-3
A
10 W
1
-55~150
℃
Tstg
Storage Temperature Range
-...