DatasheetsPDF.com

2SB826

Part Number 2SB826
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 17, 2020
Detailed Description isc Silicon PNP Power Transistor 2SB826 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Volta...
Datasheet 2SB826




Overview
isc Silicon PNP Power Transistor 2SB826 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.
5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1062 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other gereral high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak PC Total Power Dissipa...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)