isc Silicon
PNP Darlington Power
Transistor
2SB885
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= -2.
5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.
5V(Max)@ IC= -2.
5A ·Complement to Type 2SD1195 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage
regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Pe...