| Part Number | 2SB886 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE = 1500(Min)@ IC= -4A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@... |
| Features |
ARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A, IB= -8mA
VBE(sat) Base-Emitter Saturatio...
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| File Size | 210.58KB |
| Datasheet |
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2SB880 : Ordering number:924E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB880/2SD1190 For Various Drivers Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulators. Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB880/2SD1190] ( ) : 2SB880 Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature S.
2SB880 : ·With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD1190 APPLICATIONS ·Motor drivers,printer hammer drivers,relay drivers,voltage regulators PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -6 -4 -6 30 W UNIT V V V A A SavantIC Semiconductor www.DataSh.
2SB880 : ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation .
2SB881 : Ordering number:925E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB881/2SD1191 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturaion voltage. Package Dimensions unit:mm 2010C [2SB881/2SD1191] ( ) : 2SB881 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at .
2SB881 : ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3.5A ·Complement to Type 2SD1191 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipat.
2SB882 : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
2SB882 : ·High DC Current Gain- : hFE = 2000(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1192 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissi.
2SB883 : Ordering number:1036B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB883/2SD1193 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2022A [2SB883/2SD1193] ( ) : 2SB883 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta .
2SB883 : ·High DC Current Gain- : hFE = 2000(Min)@ IC= -7A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -7A ·Complement to Type 2SD1193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temper.
2SB884 : Ordering number:1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB884/2SD1194] ( ) : 2SB884 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at T.
2SB884 : ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1194 APPLICATIONS ·For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -3 -5 30 W UNIT V V V A A Sa.
2SB884 : ·High DC Current Gain- : hFE = 1500(Min)@ IC= -1.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD1194 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipa.
2SB885 : Ordering number:927E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB885/2SD1195 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB885/2SD1195] ( ) : 2SB885 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta.
2SB885 : ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1195 APPLICATIONS ·For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -5 -8 35 W UNIT V V V A A Sa.
2SB885 : ·High DC Current Gain- : hFE = 1500(Min)@ IC= -2.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SD1195 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipa.
2SB886 : Ordering number:928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB886/2SD1196] ( ) : 2SB886 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta.
2SB886 : ·With TO-220C package ·Complement to type 2SD1196 ·DARLINGTON ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB886 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -8 -12 40 W UNIT .