isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.
4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
2 W
30
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