isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
5V(Max.
)@ IC= -3A ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD1414 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power D...