2SB1031

2SB1030 : Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit marking +0.2 0.45–0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW.

2SB1030A : Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.0±0.2 3.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit marking +0.2 0.45–0.1 0.7±0.1 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.27 1.27 V A A mW.

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2SB1031K : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c .

2SB1032 : 2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB1032(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 1 Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150 Unit V V V A A A W °C °C PC * Tj Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min –120 .

2SB1032 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : = V(BR)CEO -120V(Min) ·Complement to Type 2SD1436 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1032 isc websi.

2SB1033 : ·With TO-220 package ·Complement to type 2SD1437 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -3 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless .

2SB1033 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1437 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is .

2SB1034 : SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) 2SB1 034 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 7. 9 MAX. FEATURES . High DC Current Gain : hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage : V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 V VCEO -80 V Emitter-Base Voltage VEBO -8 V Collector Current ic -2 A Base Current IB -0.5 A Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT PC 15 Ti Tstg 150 -55-150 .

2SB1034 : ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.5 A 15 W 150 ℃ Tstg.

2SB1034 : ·With TO-126 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -8 -2 -0.5 15 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS.

2SB1035 : w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c .

2SB1036 : Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 4.0±0.2 s Features q q q 0.7±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –120 –120 –5 –50 –20 300 150 –55 ~ +150 Unit V 1 2 3 1.27 1.27 V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter .

2SB1037 : Ordering number:EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features · High allowable collector dissipation (PC=2W). · Wide ASO. Package Dimensions unit:mm 2010C [2SB1037/2SD1459] ( ) : 2SB1037 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V Em.

2SB1037 : ·With TO-220 package ·High allowable collector dissipation. ·Complement to type 2SD1459 APPLICATIONS ·For color TV vertical output, sound output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1037 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -3 2.0 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 175 -55~175 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Si.

2SB1037 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 30 W 2 175 ℃ Tstg Storage Temperature Range -55~175 ℃ 2.