isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min.
) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= -1.
0V(Max.
)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-4
...