2SC4941

2SC4940 : SHINDENGEN Switching Power Transistor 2SC4940 4A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS •œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55•`150 •Ž Junction Temperature Tj 150 •Ž Collector to Base Voltage V 1200 V CBO Collector to Emitter VoltageV 550 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DC IC 4 A Collector Current Peak ICP 8 Base Current DC IB 2 A Base Current Peak IBP 4 Total Transistor Dissipation P 30 W T Dielectric Strength Vdis Terminals to casd, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque) 0.5(0.3) N¥m •œElectrical Characteristics (Tc=25•Ž) Item Symbol Conditions Collector to Emitter Sustain.

2SC4940 : ·With ITO-220 package ·Switching power transistor PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1200 550 7 4 8 2 4 30 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT /W www.datasheet4u.com SavantIC Semic.

2SC4941 : SHINDENGEN Switching Power Transistor 2SC4941 6A NPN OUTLINE DIMENSIONS Case : ITO-3P Unit : mm RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT Vdis TOR Conditions Terminals to case, AC 1 minute (Recommended torque) Ratings -55～150 150 1500 800 7 6 12 3 6 65 2 0.8(0.5) Ratings Min 800 Min 1500 Max 0.1 Max 0.1 Max 0.1 Min 15 Min 7 Max 0.5 Max 1.5 Max 1.92 TYP 8 Max 0.5 Max 3.5 Max 0.3 Unit.

2SC4941 : ·With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7 6 12 3 6 65 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.92 UNIT /W w.

2SC4942 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks o.

2SC4942 : SMD Type NPN Silicon Transistors 2SC4942 Transistors Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature *1 PW 10 ms, duty cycle 2 Symbol VCBO VCEO VEBO ID(DC) ID(pulse) *1 PT *2 Tj Tstg Rating 600 600 7 1 2 2 150 -55 to 150 Unit V V V A A W 50 % *2 7.5 cm X 0.7 mm ceramic board mounted Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff curre.

2SC4944 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4944 Audio Frequency General Purpose Amplifier Applications  Small package (dual type)  High voltage and high current: VCEO = 50 V, IC = 150 mA (max)  High hFE: hFE = 120 to 400  Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)  Complementary to 2SA1873 2SC4944 Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 60 V VCEO 50 V VEBO 5 V IC 150 mA IB 30 mA PC.

2SC4944 : JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors 2SC4944 DUAL TRANSISTOR (NPN+NPN) Features z Small package (dual type) z High voltage and high current z High hFE, excellent hFE linearity z Complementary to 2SA1873 SOT-353 Marking: LY LGR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 200 150 -55 to150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage.

2SC4944 : 2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features z Small package (dual type) z High voltage and high current z High hFE, excellent hFE linearity z Complementary to 2SA1873 Marking: LY LGR 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value 60 50 5 150 200 150 -55 to150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector.