isc Silicon
PNP Transistor
BC369
FEATURES
·High Current Low Voltage
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
Rth j-a Thermal Resistance,Junction to Ambient
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE -25 -20 -5
UNIT V V V
-1
A
625
mW
200
℃/W
150
℃
-55~150
℃
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isc Silicon
PNP Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise spec...