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BD745A


Part Number BD745A
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD74...
Features semi is registered trademark isc Silicon NPN Power Transistor BD745/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD745 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD745A BD745B IC= 30mA ;IB=0 60 80 V BD745C 100 ...

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BD745 : www.DataSheet4U.com BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD746 Series 115 W at 25°C Case Temperature 20 A Continuous Collector Current 25 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD745 Collector-base voltage (IE = 0) BD745A BD745B BD745C BD745 Collector-emitter voltage (IB = 0) BD745A BD745B BD745C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Co.

BD745 : ·With TO-3PN package www.datasheet4u.com ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD745/A/B/C · Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base .

BD745 : ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C ·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B 80 BD745C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 20 ICM Collector Current-Peak 25 IB Ba.

BD745A : www.DataSheet4U.com BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation .

BD745A : ·With TO-3PN package www.datasheet4u.com ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD745/A/B/C · Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base .

BD745B : ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C ·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B 80 BD745C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 20 ICM Collector Current-Peak 25 IB Ba.

BD745B : www.DataSheet4U.com BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation .

BD745B : ·With TO-3PN package www.datasheet4u.com ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD745/A/B/C · Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base .

BD745C : www.DataSheet4U.com BD745, BD745A, BD745B, BD745C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD746 Series ● 115 W at 25°C Case Temperature ● 20 A Continuous Collector Current ● 25 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation .

BD745C : ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C ·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B 80 BD745C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 20 ICM Collector Current-Peak 25 IB Ba.

BD745C : ·With TO-3PN package www.datasheet4u.com ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD745/A/B/C · Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base .




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