isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 25(Min)@IC = 1.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·Complement to Type TIP36C ·Current Gain-Bandwidth Product-
: fT= 3.
0MHz(Min)@IC= 1.
0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
25
A
ICM
Collector Current-peak
40
A
IB
Base Current
5
A
PC...