isc Silicon
NPN Power
Transistors
TIP51
DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line operated audio output amplifier,and switching
power supply drivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
250
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3.
0
A
ICM
Collector Current-Peak
5.
0
A
IB
Base Current
PD
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
0.
6
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