isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1200V(Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
2.
5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
6
A
22
W
125
℃
Tstg
Storage Temperature Range
-45~125
℃
2SC937
isc website:www.
iscsemi.
cn
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