isc Silicon
NPN Power
Transistor
DESCRIPTION ·High transition frequency ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·27MHz Power Amplifier Applications ·Recommended for output stage application
of AM 4W transmitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCER
Collector-Emitter Voltage RBE=150Ω
80
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
4
A
IE
Emitter current
Pc
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2075
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